Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices
نویسندگان
چکیده
Resonant cavity enhanced heterojunction phototransistor based on InAs/GaSb/AlSb type-II superlattice grown by molecular beam epitaxy has been demonstrated. The resonant wavelength was designed to be at near 1.9 μm range room temperature. An eleven-pair lattice matched GaSb-AlAsSb quarter-wavelength Bragg reflector used in the RCE-HPT enhance photoresponse. device showed selectivity and a enhancement of responsivity
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ژورنال
عنوان ژورنال: Infrared Physics & Technology
سال: 2021
ISSN: ['1350-4495', '1879-0275']
DOI: https://doi.org/10.1016/j.infrared.2020.103552